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Synthesis of Large‐Area InSe Monolayers by Chemical Vapor Deposition
Author(s) -
Chang HanChing,
Tu ChienLiang,
Lin KuangI,
Pu Jiang,
Takenobu Taishi,
Hsiao ChienNan,
Chen ChangHsiao
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201802351
Subject(s) - monolayer , chemical vapor deposition , materials science , nanotechnology , indium , graphene , selenide , electron mobility , heterojunction , thin film , optoelectronics , chemical engineering , selenium , engineering , metallurgy
Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high‐quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In 2 O 3 in a chemical vapor deposition (CVD) system, resulting in large‐area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm 2 , comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion‐gel‐gated field‐effect transistors based on CVD InSe monolayers exhibit n‐type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm 2 V −1 s −1 along with an on/off current ratio, of >10 4 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.