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All‐Organic Dual Spin Valves with Well‐Resolved Four Resistive‐States
Author(s) -
Banerjee Arnab,
Pal Amlan J.
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201801510
Subject(s) - spin (aerodynamics) , materials science , spin valve , resistive touchscreen , condensed matter physics , spintronics , copper , chemical physics , ferromagnetism , chemistry , magnetoresistance , physics , quantum mechanics , magnetic field , electrical engineering , metallurgy , thermodynamics , engineering
The formation of all‐organic dual spin valves (DSVs) with three organic spin‐selective layers, that is, spin‐injection, spin‐detection, and an additional spin‐filtering layer at the intermediate, is reported. As spin‐selective layers, manganese‐ and cobalt phthalocyanines, which are well‐known single‐molecule magnets, are used in their immobilized forms, so that all‐organic DSVs can be prefabricated for characterization. The three spin‐selective layers have provided four configurations with at most two spin‐flip interfaces enforcing spin‐flipping at the two nonmagnetic organic spacer layers, for which copper phthalocyanine is used. Since a couple of the four configurations have exhibited similar resistivities, the degeneracy in the resistive‐states is broken through asymmetric spin‐injection and spin‐detection layers and also through asymmetric thickness of the nonmagnetic spacer layers. When both the spin‐flip interfaces are made operative independently, a 2‐bit logic with four distinct resistive states can be achieved.