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Single Nanoparticle Magnetic Spin Memristor
Author(s) -
AlBustami Hammam,
Koplovitz Guy,
Primc Darinka,
Yochelis Shira,
Capua Eyal,
Porath Danny,
Naaman Ron,
Paltiel Yossi
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201801249
Subject(s) - spintronics , materials science , nanotechnology , memristor , molecular electronics , spin (aerodynamics) , magnet , electronics , ferromagnetism , non volatile memory , nanoparticle , optoelectronics , molecule , condensed matter physics , electrical engineering , physics , quantum mechanics , engineering , thermodynamics
There is an increasing demand for the development of a simple Si‐based universal memory device at the nanoscale that operates at high frequencies. Spin‐electronics (spintronics) can, in principle, increase the efficiency of devices and allow them to operate at high frequencies. A primary challenge for reducing the dimensions of spintronic devices is the requirement for high spin currents. To overcome this problem, a new approach is presented that uses helical chiral molecules exhibiting spin‐selective electron transport, which is called the chiral‐induced spin selectivity (CISS) effect. Using the CISS effect, the active memory device is miniaturized for the first time from the micrometer scale to 30 nm in size, and this device presents memristor‐like nonlinear logic operation at low voltages under ambient conditions and room temperature. A single nanoparticle, along with Au contacts and chiral molecules, is sufficient to function as a memory device. A single ferromagnetic nanoplatelet is used as a fixed hard magnet combined with Au contacts in which the gold contacts act as soft magnets due to the adsorbed chiral molecules.