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Gate‐Controlled Graphene–Silicon Schottky Junction Photodetector
Author(s) -
Chang Kyoung Eun,
Yoo Tae Jin,
Kim Cihyun,
Kim Yun Ji,
Lee Sang Kyung,
Kim SoYoung,
Heo Sunwoo,
Kwon Min Gyu,
Lee Byoung Hun
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201801182
Subject(s) - photodetector , graphene , optoelectronics , dark current , materials science , schottky barrier , silicon , transistor , schottky diode , field effect transistor , nanotechnology , physics , diode , voltage , quantum mechanics
Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate‐controlled graphene–silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈10 4 ), a very high photoresponsivity (≈70 A W −1 ), and a low dark current in the order of µA cm −2 in a wide wavelength range (395–850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene‐field‐effect transistor‐based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.