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Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS 2 Films
Author(s) -
Mattinen Miika,
King Peter J.,
Khriachtchev Leonid,
Meinander Kristoffer,
Gibbon James T.,
Dhanak Vin R.,
Räisänen Jyrki,
Ritala Mikko,
Leskelä Markku
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201800547
Subject(s) - materials science , wafer , atomic layer deposition , annealing (glass) , deposition (geology) , monolayer , nanotechnology , layer (electronics) , thin film , semiconductor , optoelectronics , composite material , paleontology , sediment , biology
Semiconducting 2D materials, such as SnS 2 , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few‐layer SnS 2 films has remained a great challenge. Herein, continuous wafer‐scale 2D SnS 2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low‐temperature (250 °C) postdeposition annealing. Uniform coating of large‐area and 3D substrates is demonstrated owing to the unique self‐limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T‐type crystal structure and composition, smoothness, and continuity of the SnS 2 films. A two‐stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high‐quality SnS 2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.