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High Efficiency Light‐Emitting Transistor with Vertical Metal–Oxide Heterostructure
Author(s) -
Liu Xiang,
Kuang Wenjian,
Ni Haibin,
Tao Zhi,
Chang Jianhua,
Liu Qinquan,
Ge Junxiang,
Li Chi,
Dai Qing
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201800265
Subject(s) - materials science , optoelectronics , transistor , heterojunction , light emitting diode , oxide , common emitter , luminance , quantum efficiency , optics , electrical engineering , physics , voltage , metallurgy , engineering
The monolithic integration of light‐emission with a standard logic transistor is a much‐desired multifunctionality. Here, a high‐efficiency light‐emitting transistor (LET) employing an inorganic quantum dots (QDs) emitter and a laser‐annealed vertical metal–oxide heterostructure is reported. The experimental results show that the peak efficiency and luminance of this QDs LET (QLET) are 11% and 8000 cdm −2 , respectively at a monochromatic emitting light wavelength of 585 nm. As far as it is known, these are among the highest values ever achieved for LETs. More importantly, the QLET exhibits an ultrahigh electron mobility of up to 25 cm 2 V −1 S −1 , a lower efficiency roll‐off (7% at high 3000 cdm −2 ), and excellent stability with long‐duration gate stress switching cycles. Additionally, this approach is compatible with those used in conventional large‐area silicon electronic manufacturing and can enable a scalable and cost‐effective procedure for future integrated versatile displays and lighting applications.