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Photodetectors: Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si (Small 41/2017)
Author(s) -
Mei Chunlian,
Liu Shuai,
Huang Xu,
Gan Zhikai,
Zhou Peiqi,
Wang Hui
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201770222
Subject(s) - photodetection , materials science , photodetector , optoelectronics , nanowire , plasmon , photoelectric effect , silicon , surface plasmon , nanostructure , semiconductor , surface plasmon resonance , nanotechnology , photovoltaic effect , nanoparticle , photovoltaic system , ecology , biology
In article number 1701726 , by Hui Wang and co‐workers, a silicon‐nanowire modified metal‐semiconductor nanostructure is fabricated to induce a large lateral photovoltaic effect (LPE). The increased sensitivity of LPE is beneficial to high‐performance position‐sensitive photodetectors. The strong localized surface plasmons (LSPs) supported by silver nanoparticles contributed to the enhancement of light trapping and photo‐induced carrier generation. These novel LSPs propelled methods expand excellent application prospects of photoelectric devices.