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Semiconducting Films: Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO 3– δ Films on Silicon (Small 39/2017)
Author(s) -
Gómez Andrés,
VilaFungueiriño José Manuel,
Moalla Rahma,
SaintGirons Guillaume,
Gázquez Jaume,
Varela María,
Bachelet Romain,
Gich Martí,
Rivadulla Francisco,
CarreteroGenevrier Adrián
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201770208
Subject(s) - ferroelectricity , materials science , epitaxy , silicon , molecular beam epitaxy , optoelectronics , resistive touchscreen , polarization (electrochemistry) , thin film , nanotechnology , nanostructure , dielectric , electrical engineering , chemistry , layer (electronics) , engineering
In article number 1701614 , Andrés Gómez, Adrián Carretero‐Genevrier, and co‐workers report a novel approach to integrate epitaxial nanostructured n‐type semiconducting BaTiO 3−δ films on silicon by combining molecular beam epitaxy and a water‐based chemical method. This growth strategy results into epitaxial BaTiO 3−δ /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /Si columnar nanostructures that enhance the flexoelectric response of the system and enables the control of the ferroelectric polarization and local conductivity (resistive switching) of this functional oxide upon applying a mechanical load.