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Graphene: Germanium‐Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (Small 28/2017)
Author(s) -
Wang Ziwen,
Xue Zhongying,
Zhang Miao,
Wang Yongqiang,
Xie Xiaoming,
Chu Paul K.,
Zhou Peng,
Di Zengfeng,
Wang Xi
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201770150
Subject(s) - graphene , germanium , sublimation (psychology) , chemical vapor deposition , materials science , monolayer , dielectric , nanotechnology , graphene nanoribbons , graphene oxide paper , graphene foam , layer (electronics) , chemical engineering , optoelectronics , silicon , psychology , engineering , psychotherapist
In article number 1700929 , by Peng Zhou, Zengfeng Di, and co‐workers, graphene with the desired pattern is produced on arbitrary dielectric substrates by a semiconducting, germanium‐assisted, chemical vapor deposition approach, in which the complete sublimation of the catalytic Ge layer occurs during or immediately after the formation of the monolayer graphene.