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Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017)
Author(s) -
Jiang Mingming,
He Gaohang,
Chen Hongyu,
Zhang Zhenzhong,
Zheng Lingxia,
Shan Chongxin,
Shen Dezhen,
Fang Xiaosheng
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201770105
Subject(s) - materials science , electroluminescence , optoelectronics , doping , light emitting diode , semiconductor , wavelength , impurity , conduction band , nanotechnology , physics , layer (electronics) , chemistry , organic chemistry , quantum mechanics , electron
Color‐tunable light‐emitting devices are achieved from biased individual Ga‐doped ZnO microwires in article number 1604034 , by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co‐workers. It is confirmed that tunable n‐type conduction in Ga‐doped ZnO microwires is dominated by Ga impurities. These multicolor emitters can be used to rival and complement other conventional semiconductor devices in electronic and photoelectronic devices.