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Charge‐Trap Memory: Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe 2 (Small 17/2017)
Author(s) -
Liu Chunsen,
Yan Xiao,
Wang Jianlu,
Ding Shijin,
Zhou Peng,
Zhang David Wei
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201770094
Subject(s) - trap (plumbing) , charge (physics) , non volatile memory , electron , flash memory , materials science , stack (abstract data type) , memory cell , flash (photography) , optoelectronics , nanotechnology , computer science , physics , electrical engineering , embedded system , optics , transistor , engineering , voltage , quantum mechanics , meteorology , programming language
In article number 1604128 , by Jianlu Wang, Peng Zhou, and David Wei Zhang, and co‐workers, by combining two‐dimensional material WSe 2 and a three‐dimensional Al 2 O 3 /HfO 2 /Al 2 O 3 charge‐trap stack, a charge‐trap memory without a fatal overerase issue is achieved. State of the art values for flash memory based on two‐dimensional materials are reported. The write time is significantly enhanced to 1 μs while the memory only captures electrons with a large electron memory window over 20 V and trap selectivity of about 13.