Charge‐Trap Memory: Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe 2  (Small 17/2017) | Zendy

Liu Chunsen | Zendy; Yan Xiao | Zendy; Wang Jianlu | Zendy; Ding Shijin | Zendy; Zhou Peng | Zendy; Zhang David Wei | Zendy

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Charge‐Trap Memory: Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe 2 (Small 17/2017)

Author(s) -

Liu Chunsen,

Yan Xiao,

Wang Jianlu,

Ding Shijin,

Zhou Peng,

Zhang David Wei

Publication year - 2017

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201770094

Subject(s) - trap (plumbing) , charge (physics) , non volatile memory , electron , flash memory , materials science , stack (abstract data type) , memory cell , flash (photography) , optoelectronics , nanotechnology , computer science , physics , electrical engineering , embedded system , optics , transistor , engineering , voltage , quantum mechanics , meteorology , programming language

In article number 1604128 , by Jianlu Wang, Peng Zhou, and David Wei Zhang, and co‐workers, by combining two‐dimensional material WSe 2 and a three‐dimensional Al 2 O 3 /HfO 2 /Al 2 O 3 charge‐trap stack, a charge‐trap memory without a fatal overerase issue is achieved. State of the art values for flash memory based on two‐dimensional materials are reported. The write time is significantly enhanced to 1 μs while the memory only captures electrons with a large electron memory window over 20 V and trap selectivity of about 13.

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