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Carrier Transport and Photoresponse in GeSe/MoS 2 Heterojunction p–n Diodes
Author(s) -
Tan Dezhi,
Wang Xiaofan,
Zhang Wenjin,
Lim Hong En,
Shinokita Keisuke,
Miyauchi Yuhei,
Maruyama Mina,
Okada Susumu,
Matsuda Kazunari
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201704559
Subject(s) - heterojunction , materials science , optoelectronics , transconductance , rectification , diode , stacking , quantum tunnelling , photoconductivity , nanotechnology , voltage , chemistry , transistor , electrical engineering , organic chemistry , engineering
Simple stacking of thin van der Waals 2D materials with different physical properties enables one to create heterojunctions (HJs) with novel functionalities and new potential applications. Here, a 2D material p–n HJ of GeSe/MoS 2 is fabricated and its vertical and horizontal carrier transport and photoresponse properties are studied. Substantial rectification with a very high contrast (>10 4 ) through the potential barrier in the vertical‐direction tunneling of HJs is observed. The negative differential transconductance with high peak‐to‐valley ratio (>10 5 ) due to the series resistance change of GeSe, MoS 2 , and HJs at different gate voltages is observed. Moreover, strong and broad‐band photoresponse via the photoconductive effect are also demonstrated. The explored multifunctional properties of the GeSe/MoS 2 HJs are expected to be important for understanding the carrier transport and photoresponse of 2D‐material HJs for achieving their use in various new applications in the electronics and optoelectronics fields.