Premium
Pseudohalide‐Induced 2D (CH 3 NH 3 ) 2 PbI 2 (SCN) 2 Perovskite for Ternary Resistive Memory with High Performance
Author(s) -
Cheng XueFeng,
Hou Xiang,
Zhou Jin,
Gao BiJun,
He JingHui,
Li Hua,
Xu QingFeng,
Li NaJun,
Chen DongYun,
Lu JianMei
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201703667
Subject(s) - materials science , perovskite (structure) , resistive random access memory , ternary operation , substrate (aquarium) , optoelectronics , indium tin oxide , electrode , thin film , resistive touchscreen , tin , chemical engineering , nanotechnology , metallurgy , electrical engineering , chemistry , oceanography , computer science , engineering , programming language , geology
Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide‐induced 2D (CH 3 NH 3 ) 2 PbI 2 (SCN) 2 perovskite thin film is prepared by using a one‐step solution method and fabricated into Al/perovskite film/indium–tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10 3 :10 7 , long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current–voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.