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High‐Performance Photovoltaic Detector Based on MoTe 2 /MoS 2 Van der Waals Heterostructure
Author(s) -
Chen Yan,
Wang Xudong,
Wu Guangjian,
Wang Zhen,
Fang Hehai,
Lin Tie,
Sun Shuo,
Shen Hong,
Hu Weida,
Wang Jianlu,
Sun Jinglan,
Meng Xiangjian,
Chu Junhao
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201703293
Subject(s) - heterojunction , photodetector , optoelectronics , materials science , van der waals force , photodiode , dark current , photovoltaic system , nanoscopic scale , detector , photovoltaic effect , nanotechnology , optics , physics , electrical engineering , quantum mechanics , molecule , engineering
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light‐emitting devices, and photodiodes. In this work, high‐performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating‐restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W −1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications.