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Recovery Mechanism of Degraded Black Phosphorus Field‐Effect Transistors by 1,2‐Ethanedithiol Chemistry and Extended Device Stability
Author(s) -
Kwak DoHyun,
Ra HyunSoo,
Yang Jinhoon,
Jeong MinHye,
Lee AYoung,
Lee Wonki,
Hwang Jun Yeon,
Lee JooHyoung,
Lee JongSoo
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201703194
Subject(s) - x ray photoelectron spectroscopy , black phosphorus , materials science , hexagonal boron nitride , field effect transistor , transistor , oxide , degradation (telecommunications) , phosphorus , optoelectronics , nanotechnology , chemical engineering , graphene , computer science , telecommunications , physics , quantum mechanics , voltage , engineering , metallurgy
Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen‐induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2‐ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field‐effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X‐ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride‐protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT‐induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP.