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Enhanced Performance of MoS 2 Photodetectors by Inserting an ALD‐Processed TiO 2 Interlayer
Author(s) -
Pak Yusin,
Park Woojin,
Mitra Somak,
Sasikala Devi Assa Aravindh,
Loganathan Kalaivanan,
Kumaresan Yogeenth,
Kim Yonghun,
Cho Byungjin,
Jung GunYoung,
Hussain Muhammad M.,
Roqan Iman S.
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201703176
Subject(s) - molybdenum disulfide , photodetector , materials science , atomic layer deposition , electrode , fabrication , optoelectronics , layer (electronics) , substrate (aquarium) , molybdenum , nanotechnology , metal , composite material , metallurgy , chemistry , medicine , alternative medicine , oceanography , pathology , geology
2D molybdenum disulfide (MoS 2 ) possesses excellent optoelectronic properties that make it a promising candidate for use in high‐performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS 2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS 2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer‐deposited TiO 2 interlayer (between exfoliated MoS 2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS 2 photodetectors. The TiO 2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS 2 /SiO 2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.