Premium
A Low‐Cost NiO Hole Transfer Layer for Ohmic Back Contact to Cu 2 O for Photoelectrochemical Water Splitting
Author(s) -
Wei Yijia,
Chang Xiaoxia,
Wang Tuo,
Li Chengcheng,
Gong Jinlong
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201702007
Subject(s) - ohmic contact , photocathode , materials science , non blocking i/o , water splitting , substrate (aquarium) , work function , layer (electronics) , oxide , schottky barrier , optoelectronics , electrode , chemical engineering , nanotechnology , metallurgy , chemistry , photocatalysis , biochemistry , physics , oceanography , quantum mechanics , diode , geology , engineering , catalysis , electron
Cuprous oxide (Cu 2 O) photocathode is reported as a promising candidate for photoelectrochemical water splitting. The p‐type Cu 2 O usually forms a Schottky junction with the conductive substrate due to its large work function, which blocks the collection of photogenerated holes. NiO is considered as one of the most promising hole transfer layers (HTL) for its high hole mobility, good stability, and easy processability to form a film by spin coating. The utilization of NiO HTL to form an Ohmic back contact to Cu 2 O is described, thus achieving a positive onset potential of 0.61 V versus reversible hydrogen electrode and a twofold increase of solar conversion efficiency.