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High Performance Metal Halide Perovskite Light‐Emitting Diode: From Material Design to Device Optimization
Author(s) -
Shan Qingsong,
Song Jizhong,
Zou Yousheng,
Li Jianhai,
Xu Leimeng,
Xue Jie,
Dong Yuhui,
Han Boning,
Chen Jiawei,
Zeng Haibo
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201701770
Subject(s) - light emitting diode , passivation , materials science , perovskite (structure) , optoelectronics , halide , photoluminescence , diode , quantum yield , nanotechnology , layer (electronics) , optics , chemistry , inorganic chemistry , physics , fluorescence , crystallography
Metal halide perovskites have drawn significant interest in the past decade. Superior optoelectronic properties, such as a narrow bandwidth, precise and facile tunable luminance over the entire visible spectrum, and high photoluminescence quantum yield of up to ≈100%, render metal halide perovskites suitable for next‐generation high‐definition displays and healthy lighting systems. The external quantum efficiency of perovskite light‐emitting diodes (LEDs) increases from 0.1 to 11.7% in three years; however, the energy conversion efficiency and the long‐term stability of perovskite LEDs are inadequate for practical application. Strategies to optimize the emitting layer and the device structure, with respect to material design, synthesis, surface passivation, and device optimization, are reviewed and highlighted. The long‐term stability of perovskite LEDs is evaluated as well. Meanwhile, several challenges and prospects for future development of perovskite materials and LEDs are identified.