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Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si
Author(s) -
Mei Chunlian,
Liu Shuai,
Huang Xu,
Gan Zhikai,
Zhou Peiqi,
Wang Hui
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201701726
Subject(s) - materials science , photodetection , photodetector , plasmon , optoelectronics , surface plasmon , photoelectric effect , nanowire , silicon , semiconductor , surface plasmon resonance , photoresistor , photocurrent , photovoltaic effect , nanotechnology , photovoltaic system , nanoparticle , ecology , biology
Surface plasmon‐based approaches are widely applied to improve the efficiency of photoelectric devices such as photosensors and photocells. In order to promote the light absorption and electron–hole pair generation in devices, metallodielectric nanostructures are used to boost the growth of surface plasmons. Here, silicon nanowires (SiNWs) are used to modify a metal–semiconductor structure; thus, Ag/SiNWs/Si is manufactured. In this system, a large increased lateral photovoltaic effect (LPE) is detected with a maximum positional sensitivity of 65.35 mV mm −1 , which is ≈53‐fold and 1000‐fold compared to the conventional Ag/Si (1.24 mV mm −1 ) and SiNWs/Si (0.06 mV mm −1 ), respectively. It is demonstrated that localized surface plasmons (LSPs) contribute a lot to the increment of LPE. Furthermore, through the surface‐enhanced Raman scattering spectra of rhodamine‐6G and finite‐difference time‐domain simulation, it is illustrated that silver‐coated SiNWs support strong LSPs. The results propose an enhancement mechanism based on LSPs to facilitate the photoelectric conversion in LPE and offer an effective way to improve the sensitivity of photodetectors.