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Metallic Conductive Nanowires Elaborated by PVD Metal Deposition on Suspended DNA Bundles
Author(s) -
Brun Christophe,
Elchinger PierreHenri,
glaton Guillaume,
TidianeDiagne Cheikh,
Tiron Raluca,
Thuaire Aurélie,
Gasparutto Didier,
Baillin Xavier
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201700956
Subject(s) - materials science , nanowire , ohmic contact , electrode , evaporation , nanotechnology , deposition (geology) , physical vapor deposition , drop (telecommunication) , chemical vapor deposition , titanium , electrical conductor , titanium nitride , contact resistance , optoelectronics , thin film , composite material , metallurgy , nitride , electrical engineering , chemistry , paleontology , physics , layer (electronics) , sediment , biology , thermodynamics , engineering
Metallic conductive nanowires (NWs) with DNA bundle core are achieved, thanks to an original process relying on double‐stranded DNA alignment and physical vapor deposition (PVD) metallization steps involving a silicon substrate. First, bundles of DNA are suspended with a repeatable process between 2 µm high parallel electrodes with separating gaps ranging from 800 nm to 2 µm. The process consists in the drop deposition of a DNA lambda‐phage solution on the electrodes followed by a naturally evaporation step. The deposition process is controlled by the DNA concentration within the buffer solution, the drop volume, and the electrode hydrophobicity. The suspended bundles are finally metallized with various thicknesses of titanium and gold by a PVD e‐beam evaporation process. The achieved NWs have a width ranging from a few nanometers up to 100 nm. The electrical behavior of the achieved 60 and 80 nm width metallic NWs is shown to be Ohmic and their intrinsic resistance is estimated according to different geometrical models of the NW section area. For the 80 nm width NWs, a resistance of about few ohms is established, opening exploration fields for applications in microelectronics.