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2D MoS 2 Neuromorphic Devices for Brain‐Like Computational Systems
Author(s) -
Jiang Jie,
Guo Junjie,
Wan Xiang,
Yang Yi,
Xie Haipeng,
Niu Dongmei,
Yang Junliang,
He Jun,
Gao Yongli,
Wan Qing
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201700933
Subject(s) - neuromorphic engineering , materials science , excitatory postsynaptic potential , synapse , transistor , computer science , postsynaptic potential , postsynaptic current , neuroscience , nanotechnology , artificial neural network , optoelectronics , voltage , artificial intelligence , electrical engineering , chemistry , inhibitory postsynaptic potential , biology , engineering , biochemistry , receptor
Hardware implementation of artificial synapses/neurons with 2D solid‐state devices is of great significance for nanoscale brain‐like computational systems. Here, 2D MoS 2 synaptic/neuronal transistors are fabricated by using poly(vinyl alcohol) as the laterally coupled, proton‐conducting electrolytes. Fundamental synaptic functions, such as an excitatory postsynaptic current, paired‐pulse facilitation, and a dynamic filter for information transmission of biological synapse, are successfully emulated. Most importantly, with multiple input gates and one modulatory gate, spiking‐dependent logic operation/modulation, multiplicative neural coding, and neuronal gain modulation are also experimentally demonstrated. The results indicate that the intriguing 2D MoS 2 transistors are also very promising for the next‐generation of nanoscale neuromorphic device applications.