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Defect‐Laden MoSe 2 Quantum Dots Made by Turbulent Shear Mixing as Enhanced Electrocatalysts
Author(s) -
Zhu Chongyang,
Huang Yuan,
Xu Feng,
Gao Peng,
Ge Binghui,
Chen Jing,
Zeng Haibo,
Sutter Eli,
Sutter Peter,
Sun Litao
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201700565
Subject(s) - quantum dot , catalysis , materials science , enhanced data rates for gsm evolution , nanotechnology , mixing (physics) , hydrogen , electrode , shear (geology) , turbulence , chemical engineering , chemical physics , chemistry , composite material , physics , mechanics , telecommunications , biochemistry , organic chemistry , quantum mechanics , computer science , engineering
A high density of edge sites and other defects can significantly improve the catalytic activity of layered 2D materials. Herein, this study demonstrates a novel top‐down strategy to maximize catalytic edge sites of MoSe 2 by breaking up bulk MoSe 2 into quantum dots (QDs) via “turbulent shear mixing” (TSM). The ultrasmall size of the MoSe 2 QDs provides a high fraction of atoms in reactive edge sites, thus significantly improving the catalytic activities. The violent TSM further introduces abundant defects as additional active sites for electrocatalytic reactions. These edge‐proliferated and defect‐laden MoSe 2 QDs are found to be efficient electrocatalysts for the hydrogen evolution reaction, and useful as counter electrodes in dye‐sensitized solar cells. The work provides a new paradigm for creating edge‐proliferated and defect‐rich QDs from bulk layered materials.

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