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Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016)
Author(s) -
Yurtsever Ayhan,
Onoda Jo,
Iimori Takushi,
Niki Kohei,
Miyamachi Toshio,
Abe Masayuki,
Mizuno Seigi,
Tanaka Satoru,
Komori Fumio,
Sugimoto Yoshiaki
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201670142
Subject(s) - graphene , intercalation (chemistry) , materials science , spintronics , substrate (aquarium) , doping , graphene nanoribbons , superconductivity , nanotechnology , epitaxy , layer (electronics) , condensed matter physics , optoelectronics , ferromagnetism , inorganic chemistry , chemistry , physics , oceanography , geology
On page 3956, A. Yurtsever and co‐workers demonstrate a novel method to obtain a p‐doped graphene layer on SiC (0001) substrate by Pb atom intercalation. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. It is shown that electronic properties of graphene can be greatly tuned by Pb intercalation on SiC, which can facilitate the use of graphene in the various fields such as superconductivity and spintronics.