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Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire‐Based Device: Key Information from Real‐Space Imaging Using 4D Electron Microscopy (Small 17/2016)
Author(s) -
Khan Jafar I.,
Adhikari Aniruddha,
Sun Jingya,
Priante Davide,
Bose Riya,
Shaheen Basamat S.,
Ng Tien Khee,
Zhao Chao,
Bakr Osman M.,
Ooi Boon S.,
Mohammed Omar F.
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201670087
Subject(s) - nanowire , materials science , passivation , scanning electron microscope , optoelectronics , ultrashort pulse , microscopy , electron , excitation , laser , nanotechnology , optics , physics , layer (electronics) , quantum mechanics , composite material
Selective mapping of surface charge carrier dynamics of InGaN nanowires before and after surface passivation with octadecylthiol (ODT) is reported by O. F. Mohammed and co‐workers on page 2313, using scanning ultrafast electron microscopy. In a typical experiment, the 343 nm output of the laser beam is used to excite the microscope tip to generate pulsed electrons for probing, and the 515 nm output is used as a clocking excitation pulse to initiate dynamics. Time‐resolved images demonstrate clearly that carrier recombination is significantly slowed after ODT treatment, which supports the efficient removal of surface trap states.