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Graphene: Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties (Small 1/2016)
Author(s) -
Li Qiucheng,
Liu Mengxi,
Zhang Yanfeng,
Liu Zhongfan
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201670001
Subject(s) - graphene , heterojunction , materials science , hexagonal boron nitride , nanotechnology , boron nitride , hexagonal crystal system , optoelectronics , crystallography , chemistry
The front cover of this special issue is contributed by Y. F. Zhang, Z. F. Liu, and co‐workers, who describe the synthesis and interface properties of graphene and hexagonal boron nitride heterostructures. Both in‐plane (h‐BN‐G) and vertically stacked (G/h‐BN) heterostructures have attracted intense attention for energy‐band engineering and device performance optimization for graphene. On page 32, this review article encourages further investigation of the related novel properties, as well as the application versatility of these materials.