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Direct Growth of High Mobility and Low‐Noise Lateral MoS 2 –Graphene Heterostructure Electronics
Author(s) -
Behranginia Amirhossein,
Yasaei Poya,
Majee Arnab K.,
Sangwan Vinod K.,
Long Fei,
Foss Cameron J.,
Foroozan Tara,
Fuladi Shadi,
Hantehzadeh Mohammad Reza,
ShahbazianYassar Reza,
Hersam Mark C.,
Aksamija Zlatan,
SalehiKhojin Amin
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201604301
Subject(s) - graphene , heterojunction , materials science , chemical vapor deposition , electronics , optoelectronics , fabrication , nanotechnology , schottky barrier , wafer , electron mobility , schottky diode , electrical engineering , medicine , alternative medicine , pathology , diode , engineering
Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all‐2D electronic circuitry. This study employs seed‐free consecutive chemical vapor deposition processes to synthesize high‐quality lateral MoS 2 –graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 –graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 –metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 –graphene in‐plane heterostructures are promising materials for the scale‐up of all‐2D circuitry with superlative electrical performance.