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Aligned Growth of Millimeter‐Size Hexagonal Boron Nitride Single‐Crystal Domains on Epitaxial Nickel Thin Film
Author(s) -
Meng Junhua,
Zhang Xingwang,
Wang Ye,
Yin Zhigang,
Liu Heng,
Xia Jing,
Wang Haolin,
You Jingbi,
Jin Peng,
Wang Denggui,
Meng XiangMin
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201604179
Subject(s) - materials science , sapphire , crystallinity , epitaxy , boron nitride , grain size , thin film , substrate (aquarium) , chemical vapor deposition , optoelectronics , dielectric , crystal (programming language) , graphene , single crystal , nanotechnology , layer (electronics) , crystallography , composite material , optics , laser , oceanography , physics , chemistry , geology , computer science , programming language
Atomically thin hexagonal boron nitride (h‐BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene‐based devices. For these applications, synthesis of high‐quality and large‐area h‐BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter‐size single‐crystal h‐BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single‐crystal h‐BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large‐size h‐BN domains results mainly from the reduced Ni‐grain boundaries and the improved crystallinity of Ni film. Furthermore, the h‐BN domains show well‐aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large‐scale high‐quality h‐BN layers for electronic applications.