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Temperature‐Related Morphological Evolution of MoS 2 Domains on Graphene and Electron Transfer within Heterostructures
Author(s) -
Wan Wen,
Zhan Linjie,
Xu Binbin,
Zhao Feng,
Zhu Zhenwei,
Zhou Yinghui,
Yang Zhilin,
Shih Tienmo,
Cai Weiwei
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201603549
Subject(s) - graphene , heterojunction , materials science , electron transfer , nanotechnology , electron , chemical physics , optoelectronics , condensed matter physics , physics , chemistry , quantum mechanics
Other than the well‐known sulfurization of molybdate compound to synthesize molybdenum disulfide (MoS 2 ) layers, the dynamic process in the whole crystalline growth from nuclei to triangular domains has been rarely experimentally explored. Here, a competing sulfur‐capture principle jointly with strict epitaxial mechanism is first proposed for the initial topography evolution and the final intrinsic highly oriented growth of triangular MoS 2 domains with Mo or S terminations on the graphene (Gr) template. Additionally, potential distributions on MoS 2 domains and bare Gr are presented to be different due to the charge transfer within heterostructures. The findings offer the mechanism of templated growth of 2D transition metal dichalcogenides, and provide general principles in syntheses of vertical 2D heterostructures that can be applied to electronics.