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Graphene–Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy
Author(s) -
Boucherif Abderrahim Rahim,
Boucherif Abderraouf,
Kolhatkar Gitanjali,
Ruediger Andreas,
Arès Richard
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201603269
Subject(s) - materials science , epitaxy , semiconductor , graphene , nanocomposite , silicon , nanotechnology , substrate (aquarium) , lattice constant , optoelectronics , mesoporous material , layer (electronics) , chemistry , optics , biochemistry , oceanography , physics , geology , diffraction , catalysis
The ultimate performance of a solid state device is limited by the restricted number of crystalline substrates that are available for epitaxial growth. As a result, only a small fraction of semiconductors are usable. This study describes a novel concept for a tunable compliant substrate for epitaxy, based on a graphene–porous silicon nanocomposite, which extends the range of available lattice constants for epitaxial semiconductor alloys. The presence of graphene and its effect on the strain of the porous layer lattice parameter are discussed in detail and new remarkable properties are demonstrated. These include thermal stability up to 900 °C, lattice tuning up to 0.9 % mismatch, and compliance under stress for virtual substrate thicknesses of several micrometers. A theoretical model is proposed to define the compliant substrate design rules. These advances lay the foundation for the fabrication of a compliant substrate that could unlock the lattice constant restrictions for defect‐free new epitaxial semiconductor alloys and devices.