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Selective Nucleation of GaAs on Si Nanofacets
Author(s) -
Prieto Ivan,
Kozak Roksolana,
Skibitzki Oliver,
Rossell Marta D.,
Schroeder Thomas,
Erni Rolf,
von Känel Hans
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201603122
Subject(s) - nucleation , materials science , wafer , epitaxy , nanocrystal , substrate (aquarium) , facet (psychology) , yield (engineering) , reactive ion etching , micrometer , etching (microfabrication) , lithography , nanotechnology , optoelectronics , chemistry , optics , composite material , layer (electronics) , psychology , social psychology , oceanography , physics , organic chemistry , personality , geology , big five personality traits
The early growth stage of GaAs by metal organic vapor phase epitaxy on a novel kind of Si substrate is investigated. The substrate consists of nanotips (NTs) fabricated on a Si(001) wafer by means of lithography and reactive ion etching. 3D GaAs nanocrystals are found to nucleate with a probability of 90% on the ( n 0 m ), (– n 0 m ), (0 nm ), and (0– nm ) facets ( n , m integers) of these NTs. Additionally, in terms of nucleation yield, an average of 2 GaAs nanocrystals in each of those facets is observed. By contrast, facets of type {± nnm } remain virtually free of any 3D nuclei. A simple model based on the kinetics of the growth is used to explain the facet selective 3D nucleation. The model is consistent with a similar selectivity observed on micrometer‐sized substrate features.