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Direct Observation of Dual‐Filament Switching Behaviors in Ta 2 O 5 ‐Based Memristors
Author(s) -
Chang ChiaFu,
Chen JuiYuan,
Huang ChunWei,
Chiu ChungHua,
Lin TingYi,
Yeh PingHung,
Wu WenWei
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201603116
Subject(s) - protein filament , stack (abstract data type) , materials science , transmission electron microscopy , dual (grammatical number) , spectroscopy , nanotechnology , spectrometer , electron energy loss spectroscopy , energy (signal processing) , optoelectronics , computer science , physics , optics , quantum mechanics , composite material , programming language , art , literature
The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta 2 O 5 /Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.