Direct Observation of Dual‐Filament Switching Behaviors in Ta 2 O 5 ‐Based Memristors | Zendy

Chang ChiaFu | Zendy; Chen JuiYuan | Zendy; Huang ChunWei | Zendy; Chiu ChungHua | Zendy; Lin TingYi | Zendy; Yeh PingHung | Zendy; Wu WenWei | Zendy

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Direct Observation of Dual‐Filament Switching Behaviors in Ta 2 O 5 ‐Based Memristors

Author(s) -

Chang ChiaFu,

Chen JuiYuan,

Huang ChunWei,

Chiu ChungHua,

Lin TingYi,

Yeh PingHung,

Wu WenWei

Publication year - 2017

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201603116

Subject(s) - protein filament , stack (abstract data type) , materials science , transmission electron microscopy , dual (grammatical number) , spectroscopy , nanotechnology , spectrometer , electron energy loss spectroscopy , energy (signal processing) , optoelectronics , computer science , physics , optics , quantum mechanics , composite material , programming language , art , literature

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta 2 O 5 /Pt system. The device is switched to a low‐resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.

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