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Precisely Aligned Monolayer MoS 2 Epitaxially Grown on h‐BN basal Plane
Author(s) -
Yu Hua,
Yang Zhengzhong,
Du Luojun,
Zhang Jing,
Shi Jinan,
Chen Wei,
Chen Peng,
Liao Mengzhou,
Zhao Jing,
Meng Jianling,
Wang Guole,
Zhu Jianqi,
Yang Rong,
Shi Dongxia,
Gu Lin,
Zhang Guangyu
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201603005
Subject(s) - monolayer , epitaxy , basal plane , materials science , nanotechnology , crystallography , chemistry , layer (electronics)
Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS 2 ) on hexagonal boron nitride (h‐BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS 2 domains on the basal plane of h‐BN by a low‐pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS 2 and h‐BN basal plane are present. Domains with same orientation stitch and form single‐crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth.