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Black Phosphorus N‐Type Field‐Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping
Author(s) -
Prakash Amit,
Cai Yongqing,
Zhang Gang,
Zhang YongWei,
Ang KahWee
Publication year - 2017
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201602909
Subject(s) - black phosphorus , doping , materials science , electron mobility , aluminium , field effect transistor , induced high electron mobility transistor , electron , phosphorus , condensed matter physics , transistor , optoelectronics , chemical physics , chemistry , metallurgy , physics , quantum mechanics , voltage
High‐performance black phosphorus n‐type field‐effect transistors are realized using Al adatoms as effective electron donors, which achieved a record high mobility of >1495 cm 2 V −1 s −1 at 260 K. The electron mobility is corroborated to charged‐impurity scattering at low temperature, whilst metallic‐like conduction is observed at high gate bias with increased carrier density due to enhanced electron–phonon interactions at high temperature.