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Fabrication of Multilayer Borophene on Insulator Structure
Author(s) -
Tsai HsuSheng,
Hsiao ChingHung,
Lin YuPin,
Chen ChiaWei,
Ouyang Hao,
Liang JenqHorng
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201601915
Subject(s) - x ray photoelectron spectroscopy , fabrication , borophene , transmission electron microscopy , materials science , nanotechnology , boron , insulator (electricity) , computer science , crystallography , optoelectronics , chemistry , physics , medicine , alternative medicine , graphene , organic chemistry , pathology , nuclear magnetic resonance
The X‐ray photoelectron spectroscopy spectra indicate the peak of BB bonds , implying that the elemental boron structure might be formed after the process. The multilayer β‐borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer β‐borophene is announced in this study.