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Atomic‐Monolayer MoS 2 Band‐to‐Band Tunneling Field‐Effect Transistor
Author(s) -
Lan YannWen,
Torres Carlos M.,
Tsai ShinHung,
Zhu Xiaodan,
Shi Yumeng,
Li MingYang,
Li LainJong,
Yeh WenKuan,
Wang Kang L.
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201601310
Subject(s) - monolayer , ambipolar diffusion , quantum tunnelling , field effect transistor , transistor , optoelectronics , coupling (piping) , materials science , field (mathematics) , nanotechnology , computer science , physics , quantum mechanics , electron , voltage , metallurgy , mathematics , pure mathematics
The experimental observation of band‐to‐band tunneling in novel tunneling field‐effect transistors utilizing a monolayer of MoS 2 as the conducting channel is demonstrated. Our results indicate that the strong gate‐coupling efficiency enabled by two‐dimensional materials, such as monolayer MoS 2 , results in the direct manifestation of a band‐to‐band tunneling current and an ambipolar transport.