Atomic‐Monolayer MoS 2  Band‐to‐Band Tunneling Field‐Effect Transistor | Zendy

Lan YannWen | Zendy; Torres Carlos M. | Zendy; Tsai ShinHung | Zendy; Zhu Xiaodan | Zendy; Shi Yumeng | Zendy; Li MingYang | Zendy; Li LainJong | Zendy; Yeh WenKuan | Zendy; Wang Kang L. | Zendy

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Atomic‐Monolayer MoS 2 Band‐to‐Band Tunneling Field‐Effect Transistor

Author(s) -

Lan YannWen,

Torres Carlos M.,

Tsai ShinHung,

Zhu Xiaodan,

Shi Yumeng,

Li MingYang,

Li LainJong,

Yeh WenKuan,

Wang Kang L.

Publication year - 2016

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201601310

Subject(s) - monolayer , ambipolar diffusion , quantum tunnelling , field effect transistor , transistor , optoelectronics , coupling (piping) , materials science , field (mathematics) , nanotechnology , computer science , physics , quantum mechanics , electron , voltage , metallurgy , mathematics , pure mathematics

The experimental observation of band‐to‐band tunneling in novel tunneling field‐effect transistors utilizing a monolayer of MoS 2 as the conducting channel is demonstrated. Our results indicate that the strong gate‐coupling efficiency enabled by two‐dimensional materials, such as monolayer MoS 2 , results in the direct manifestation of a band‐to‐band tunneling current and an ambipolar transport.

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