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Inorganic Nano Light‐Emitting Transistor: p‐Type Porous Silicon Nanowire/n‐Type ZnO Nanofilm
Author(s) -
Lee Sang Hoon,
Kim Jong Woo,
Lee Tae Il,
Myoung Jae Min
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201601205
Subject(s) - electroluminescence , materials science , porous silicon , optoelectronics , nanowire , substrate (aquarium) , doping , silicon , light emission , p–n junction , transistor , light intensity , fermi level , current density , semiconductor , layer (electronics) , nanotechnology , voltage , optics , electrical engineering , oceanography , physics , engineering , quantum mechanics , geology , electron
An inorganic nano light‐emitting transistor (INLET) consisting of p‐type porous Si nanowires (PoSiNWs) and an n‐type ZnO nanofilm was integrated on a heavily doped p‐type Si substrate with a thermally grown SiO 2 layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I–V and electroluminescent characteristics of the INLET are investigated as a function of gate bias ( V g ). As the V g is changed from 0 V to −20 V, the current level and light‐emission intensity in the orange–red range increase by three and two times, respectively, with a forward bias of 20 V in the p–n junction, compared to those at a V g of 0 V. On the other hand, as the V g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built‐in potential at the p–n junction by the applied gate electric field.