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Pressure‐Induced Charge Transfer Doping of Monolayer Graphene/MoS 2 Heterostructure
Author(s) -
Pandey Tribhuwan,
Nayak Avinash P.,
Liu Jin,
Moran Samuel T.,
Kim JoonSeok,
Li LainJong,
Lin JungFu,
Akinwande Deji,
Singh Abhishek K.
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201600808
Subject(s) - graphene , monolayer , heterojunction , materials science , doping , charge (physics) , nanotechnology , optoelectronics , physics , quantum mechanics
A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS 2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa −1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I 2D / I G measurements.
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