Premium
Toward High‐Performance Top‐Gate Ultrathin HfS 2 Field‐Effect Transistors by Interface Engineering
Author(s) -
Xu Kai,
Huang Yun,
Chen Bo,
Xia Yang,
Lei Wen,
Wang Zhenxing,
Wang Qisheng,
Wang Feng,
Yin Lei,
He Jun
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201600521
Subject(s) - materials science , subthreshold swing , field effect transistor , optoelectronics , pinhole (optics) , dielectric , transistor , transition metal , nanotechnology , gate dielectric , electrical engineering , chemistry , optics , voltage , engineering , biochemistry , catalysis , physics
Top‐gate HfS 2 field‐effect transistors (FETs) with 5 nm HfO 2 as dielectrics are successfully demonstrated, with on/off ratio of 10 5 and subthreshold swing of 95 mV dec −1 . Moreover, due to the self‐functionalization of HfS 2 , uniform and ultrathin HfO 2 film free of pinhole‐like defects could be deposited on HfS 2 , which is dramatically different from other transition metal dichalcogenide FETs.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom