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Toward High‐Performance Top‐Gate Ultrathin HfS 2 Field‐Effect Transistors by Interface Engineering
Author(s) -
Xu Kai,
Huang Yun,
Chen Bo,
Xia Yang,
Lei Wen,
Wang Zhenxing,
Wang Qisheng,
Wang Feng,
Yin Lei,
He Jun
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201600521
Subject(s) - materials science , subthreshold swing , field effect transistor , optoelectronics , pinhole (optics) , dielectric , transistor , transition metal , nanotechnology , gate dielectric , electrical engineering , chemistry , optics , voltage , engineering , biochemistry , catalysis , physics
Top‐gate HfS 2 field‐effect transistors (FETs) with 5 nm HfO 2 as dielectrics are successfully demonstrated, with on/off ratio of 10 5 and subthreshold swing of 95 mV dec −1 . Moreover, due to the self‐functionalization of HfS 2 , uniform and ultrathin HfO 2 film free of pinhole‐like defects could be deposited on HfS 2 , which is dramatically different from other transition metal dichalcogenide FETs.