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Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small 12/2015)
Author(s) -
Song YongHa,
Ahn SangJoon Kenny,
Kim MinWu,
Lee JeongOen,
Hwang ChiSun,
Pi JaeEun,
Ko SeungDeok,
Choi KwangWook,
Park SangHee Ko,
Yoon JunBo
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201570066
Subject(s) - thin film transistor , inverter , materials science , microelectromechanical systems , logic gate , optoelectronics , transistor , oxide , pass transistor logic , electrical engineering , electronic engineering , voltage , nanotechnology , engineering , layer (electronics) , metallurgy
A hybrid complementary logic inverter consisting of an n‐type oxide thin‐film transistor (TFT) and a microelectromechanical system switch is proposed as a promising alternative to p‐type oxide TFTs by S.‐H. K. Park, J.‐B. Yoon, and co‐workers for ultralow power integrated circuits. Monolithically integrated heterogeneous microdevices are shown on a flexible substrate with a MEMS switch vertically stacked on top of the n‐type oxide TFT. On page 1390, the logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero‐short circuit current, and exceedingly high voltage gain.