Premium
Photodetectors: High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015)
Author(s) -
Miao Jinshui,
Hu Weida,
Guo Nan,
Lu Zhenyu,
Liu Xingqiang,
Liao Lei,
Chen Pingping,
Jiang Tao,
Wu Shiwei,
Ho Johnny C.,
Wang Lin,
Chen Xiaoshuang,
Lu Wei
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201570046
Subject(s) - heterojunction , photocurrent , photodetector , responsivity , materials science , graphene , optoelectronics , nanowire , schottky barrier , infrared , photoconductivity , nanotechnology , optics , physics , diode
On page 936, W. Hu, L. Liao, and co‐workers develop a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector. This device exhibits a high photoresponsivity and a high photocurrent on/off ratio. The Fermi level of graphene can be widely tuned by the gate voltage due to its 2D nature. As a result, the back‐gated bias can modulate the Schottky barrier at the interface between the graphene and InAs NWs, thus further controlling photocarrier transport across the vertically stacked heterostructures.