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Memory: Graphene–Graphene Oxide Floating Gate Transistor Memory (Small 3/2015)
Author(s) -
Jang Sukjae,
Hwang Euyheon,
Lee Jung Heon,
Park Ho Seok,
Cho Jeong Ho
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201570014
Subject(s) - graphene , materials science , oxide , optoelectronics , transistor , nanotechnology , doping , graphene nanoribbons , channel (broadcasting) , graphene oxide paper , non volatile memory , gate oxide , electrical engineering , voltage , engineering , metallurgy
A novel, transparent, flexible graphene channel floating‐gate transistor memory (FGTM) device is developed by J. H. Cho and co‐workers, who combine a single‐layer graphene active channel with graphene oxide (GO) charge trap elements. On page 311, the application of positively charged GO (GO–NH 3 + ) and precise control over n‐doping in the graphene channel dramatically enhance the electrical performance and mechanical stability of the memory device.