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Graphene: Metal‐Etching‐Free Direct Delamination and Transfer of Single‐Layer Graphene with a High Degree of Freedom (Small 2/2015)
Author(s) -
Yang Sang Yoon,
Oh Joong Gun,
Jung Dae Yool,
Choi HongKyw,
Yu Chan Hak,
Shin Jongwoo,
Choi ChoonGi,
Cho Byung Jin,
Choi SungYool
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201570008
Subject(s) - graphene , materials science , delamination (geology) , layer (electronics) , substrate (aquarium) , etching (microfabrication) , stacking , graphene foam , graphene oxide paper , electrode , graphene nanoribbons , composite material , dry etching , metal , optoelectronics , copper , nanotechnology , metallurgy , chemistry , paleontology , biology , subduction , tectonics , oceanography , organic chemistry , geology
A novel transfer process with an elastomeric stamp is described on page 175 by S.‐Y. Choi and co‐workers. It includes the metal‐etching free, direct delamination of graphene from a copper growth substrate and transfer to a flexible substrate. The capabilities of the developed transfer process, such as large‐area transfer onto a flexible substrate, multi‐layer stacking of graphene, and transfer onto a structured electrode surface are demonstrated.
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