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Structural Phase Transition Effect on Resistive Switching Behavior of MoS 2 ‐Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices
Author(s) -
Zhang Peng,
Gao Cunxu,
Xu Benhua,
Qi Lin,
Jiang Changjun,
Gao Meizhen,
Xue Desheng
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201503827
Subject(s) - materials science , molybdenum disulfide , non volatile memory , nanocomposite , nanotechnology , polyethylene terephthalate , resistive random access memory , phase (matter) , phase transition , molybdenum , polyvinylpyrrolidone , optoelectronics , electrode , composite material , polymer chemistry , chemistry , physics , organic chemistry , quantum mechanics , metallurgy
The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS 2 ) nanosheets can influence the electronic properties of the materials. The 1T phase of MoS 2 is introduced into the 2H‐MoS 2 nanosheets by two‐step hydrothermal synthetic methods. Two types of nonvolatile memory effects, namely write‐once read‐many times memory and rewritable memory effect, are observed in the flexible memory devices with the configuration of Al/1T@2H‐MoS 2 ‐polyvinylpyrrolidone (PVP)/indium tin oxide (ITO)/polyethylene terephthalate (PET) and Al/2H‐MoS 2 ‐PVP/ITO/PET, respectively. It is observed that structural phase transition in MoS 2 nanosheets plays an important role on the resistive switching behaviors of the MoS 2 ‐based device. It is hoped that our results can offer a general route for the preparation of various promising nanocomposites based on 2D nanosheets of layered transition metal dichalcogenides for fabricating the high performance and flexible nonvolatile memory devices through regulating the phase structure in the 2D nanosheets.