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In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating
Author(s) -
Stanford Michael G.,
Lewis Brett B.,
Iberi Vighter,
Fowlkes Jason D.,
Tan Shida,
Livengood Rick,
Rack Philip D.
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201503680
Subject(s) - materials science , photothermal therapy , laser , nanoscopic scale , silicon , ion beam , nanotechnology , nanolithography , optoelectronics , graphene , focused ion beam , ion , ion implantation , beam (structure) , optics , chemistry , fabrication , medicine , physics , alternative medicine , organic chemistry , pathology
Focused helium and neon ion (He + /Ne + ) beam processing has recently been used to push resolution limits of direct‐write nanoscale synthesis. The ubiquitous insertion of focused He + /Ne + beams as the next‐generation nanofabrication tool‐of‐choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He + /Ne + ion exposures in silicon via a synchronized infrared pulsed laser‐assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser‐assisted exposure process is also shown to reduce peripheral defects in He + patterned graphene, which makes this process an attractive candidate for direct‐write patterning of 2D materials. These results offer a necessary solution for the applicability of high‐resolution direct‐write nanoscale material processing via focused ion beams.