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In Situ Fabrication of Vertical Multilayered MoS 2 /Si Homotype Heterojunction for High‐Speed Visible–Near‐Infrared Photodetectors
Author(s) -
Zhang Yan,
Yu Yongqiang,
Mi Longfei,
Wang Hui,
Zhu Zhifeng,
Wu Qingyun,
Zhang Yugang,
Jiang Yang
Publication year - 2016
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201502923
Subject(s) - responsivity , heterojunction , materials science , photodetector , optoelectronics , fabrication , infrared , silicon , visible spectrum , optics , medicine , alternative medicine , physics , pathology
c2D transition metal dichalcogenides (TMDCs)‐based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n‐MoS 2 /n‐silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS 2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible–near‐infrared light with responsivity up to 11.9 A W –1 . Notably, the photodetector shows high‐speed response time of ≈30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS 2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS 2 /Si homotype heterojunction have great potential application in the field of visible–near‐infrared detection and might be used as elements for construction of high‐speed integrated optoelectronic sensor circuitry.