Premium
BN‐Enabled Epitaxy of Pb 1– x Sn x Se Nanoplates on SiO 2 /Si for High‐Performance Mid‐Infrared Detection
Author(s) -
Wang Qisheng,
Wen Yao,
Yao Fengrui,
Huang Yun,
Wang Zhenxing,
Li Molin,
Zhan Xueying,
Xu Kai,
Wang Fengmei,
Wang Feng,
Li Jie,
Liu Kaihui,
Jiang Chao,
Liu Fengqi,
He Jun
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201502049
Subject(s) - materials science , infrared , electron mobility , boron , epitaxy , analytical chemistry (journal) , optoelectronics , layer (electronics) , nanotechnology , chemistry , optics , physics , organic chemistry , chromatography
By designing a few‐layer boron nitried (BN) buffer layer , topological crystalline insulator Pb 1– x Sn x Se nanoplates are directly grown on SiO 2 /Si, which shows high compatibility with current Si‐based integrated circuit technology. Back‐gated field‐effect transistors of Pb 1– x Sn x Se nanoplates exhibit a room‐temperature carrier mobility of 0.73–4.90 cm 2 V −1 s −1 , comparable to layered materials and molecular crystals, and high‐efficiency mid‐IR detection (1.9–2.0 μm).