Premium
Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires
Author(s) -
Dobrovolsky Alexander,
Stehr Jan E.,
Sukritta Supanee,
Kuang Yanjin,
Tu Charles W.,
Chen Weimin M.,
Buyanova Irina A.
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201501538
Subject(s) - nanowire , materials science , lasing threshold , optoelectronics , core (optical fiber) , photonics , semiconductor , band gap , refractive index , molecular beam epitaxy , epitaxy , nanotechnology , layer (electronics) , wavelength , composite material
Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry‐Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ‐PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.