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Fabrication of 2D Heterojunction in Graphene via Low Energy N 2 + Irradiation
Author(s) -
Sala Alessandro,
Zamborlini Giovanni,
Menteş Tevfik Onur,
Locatelli Andrea
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201501473
Subject(s) - graphene , materials science , irradiation , fabrication , heterojunction , ion , optoelectronics , doping , graphene nanoribbons , charge carrier , nanotechnology , chemistry , physics , medicine , alternative medicine , organic chemistry , pathology , nuclear physics
Substitutional doping in graphene is locally induced with very low energy nitrogen ions. Irradiated and nonirradiated areas exhibit different charge carrier densities and are separated by a sharp boundary, stable up to 750 °C. The way towards lithographic control of the electronic properties of graphene by ion irradiation is paved, providing a proof of principle for the fabrication of 2D graphene‐based heterojunctions.