Fabrication of 2D Heterojunction in Graphene via Low Energy N 2  +  Irradiation | Zendy

Sala Alessandro | Zendy; Zamborlini Giovanni | Zendy; Menteş Tevfik Onur | Zendy; Locatelli Andrea | Zendy

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Fabrication of 2D Heterojunction in Graphene via Low Energy N 2 + Irradiation

Author(s) -

Sala Alessandro,

Zamborlini Giovanni,

Menteş Tevfik Onur,

Locatelli Andrea

Publication year - 2015

Publication title -

small

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.785

H-Index - 236

eISSN - 1613-6829

pISSN - 1613-6810

DOI - 10.1002/smll.201501473

Subject(s) - graphene , materials science , irradiation , fabrication , heterojunction , ion , optoelectronics , doping , graphene nanoribbons , charge carrier , nanotechnology , chemistry , physics , medicine , alternative medicine , organic chemistry , pathology , nuclear physics

Substitutional doping in graphene is locally induced with very low energy nitrogen ions. Irradiated and nonirradiated areas exhibit different charge carrier densities and are separated by a sharp boundary, stable up to 750 °C. The way towards lithographic control of the electronic properties of graphene by ion irradiation is paved, providing a proof of principle for the fabrication of 2D graphene‐based heterojunctions.

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