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Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium
Author(s) -
Yin Jun,
Liu Xiaofei,
Lu Wanglin,
Li Jidong,
Cao Yuanzhi,
Li Yao,
Xu Ying,
Li Xuemei,
Zhou Jun,
Jin Chuanhong,
Guo Wanlin
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201501439
Subject(s) - hexagonal boron nitride , monolayer , germanium , materials science , boron , hexagonal crystal system , crystallography , nitride , boron nitride , symmetry (geometry) , crystal (programming language) , nanotechnology , condensed matter physics , optoelectronics , layer (electronics) , chemistry , geometry , graphene , physics , computer science , organic chemistry , silicon , programming language , mathematics
A hexagonal boron nitride monolayer with aligned orientations is grown on reusable semiconducting germanium. The number of primary orientations of the h‐BN domains depends on the symmetry of the underlying crystal face, and Ge (110) gives rise to only two opposite orientations. The structures and electrical properties of grain boundaries between h‐BN domains with opposite orientations are also systematically analyzed.