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High‐Performance Flexible Organic Nano‐Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles
Author(s) -
Jung Ji Hyung,
Kim Sunghwan,
Kim Hyeonjung,
Park Jongnam,
Oh Joon Hak
Publication year - 2015
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201501382
Subject(s) - materials science , nanotechnology , nanoparticle , non volatile memory , optoelectronics , fabrication , medicine , alternative medicine , pathology
Nano‐floating gate memory (NFGM) devices are transistor‐type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe 2 O 4 ) nanoparticles (NPs) as charge trap sites and pentacene as a p ‐type semiconductor. Monodisperse CoFe 2 O 4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle–particle interactions. CoFe 2 O 4 NP‐based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I on / I off ) of ≈2.98 × 10 3 , and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe 2 O 4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high‐performance organic memory devices.